DC Current Gain -hFE = 40(Min)@ IC= 5A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F
Complement to Type BDT82F/84F/86F/88F
Minimum Lot-to-Lot variations for robust device
performance and reliable opera
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isc Silicon NPN Power Transistors
BDT81F/83F/85F/87F
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F
·Complement to Type BDT82F/84F/86F/88F ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio output stages and general amplifer
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDT81F
60
BDT83F
80
VCBO
Collector-Base Voltage
BDT85F
100
BDT87F
120
BDT81F
60
VCEO
Collector-Emitter Voltage
BDT83F
80
BDT85F
100
BDT87F
120
VEBO
Emitter-Base Voltage
7
IC
Collector Current-Continuous
15
ICM
Collector Current-Peak
20
IB
Base Curren
BDT81F Datasheet
