BTB04S Datasheet | Inchange Semiconductor

FEATURES - With TO-220AB non insulated package - Suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER IT(RMS) ITSM Tj Tstg Rth(j-c) Rth(j-a) RMS on-state current (full sine wave)Tj=95℃ Non-repetitive peak on-state current tp=10ms Operating junction temperature Storage temperature Thermal resistance, junction to case Thermal resistance, junction to ambient MIN UNIT 4A 40 A 110 ℃ -45~150 ℃ 3.2 ℃/W 60 ℃/W SYMBOL PARAMETER VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage 400T/D/S/A 600T/D/S/A 700T/D/S/A UNIT 400 600 700 V 400 600 700 V ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM IDRM Repetitive peak reverse current Repetitive peak off-state current VR=VRRM, VR=VRRM, Tj=110℃ VD=VDRM, VD=VDRM, Tj=110℃ Gate trigger current Ⅰ-Ⅱ-Ⅲ VD=12V; RL= 33Ω T 5 Ⅳ5 IH Holding current IGT= 0.1A, Gate Open 15 VGT Gate trigger voltage all quadrant VD=12V; RL= 30Ω VTM On-state voltage IT= 5A 0.01 0.5 0.01 0.5 DS 5 10 10 10 15...