BUL903ED
BUL903ED is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- INTEGRATED ANTISATURATION AND
PROTECTIONNETWORK
- INTEGRATED ANTIPARALLELCOLLECTOR EMITTER DIODE
- HIGH VOLTAGECAPABILITY
- LOW SPREADOF DYNAMIC PARAMETERS
- MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
- VERYHIGH SWITCHING SPEED
- ARCING TEST SELFPROTECTED
APPLICATIONS
- LAMP ELECTRONIC BALLASTFOR
FLUORESCENT LIGHTINGUSING 277V HALF BRIDGECURRENT-FED CONFIGURATION
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCES
Collector-Emitter Voltage (VBE = 0)
VCEO
Collector-Emitter Voltage(IB = 0)
VEBO
Emitter-Base Voltage (IC = 0)
IC Collector Current-Continuous
ICM Collector Peak Current (tp <5 ms)
IB Base Current
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
2 70 150
Tstg Storage Temperature Range
-65~150
UNIT V V V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL...
