STMicroelectronics BUL903
The BUL903ED is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The device has been designed in order to operate without baker clamp and transil protection. This enables saving from 2 up to 10 components in the application.| Part No. | BUL903 |
|---|---|
| Datasheet | BUL903 Download |
| Manufacturer |  STMicroelectronics |
| Description | NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
s LAMP ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING USING 277V HALF BRIDGE CURRENT-FED CONFIGURATIONDESCRIPTION
INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp <5 ms) Base Current Base Peak Current (tp <5 ms) Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value 900 400 7 5 8 2 4 70 -65 to 150 150 Uni t V V V A A A A W o o C C June 1998 1/6 BUL903ED THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.8 62.5 o o C/W C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO V CEO(sus) Parameter Collector Cut-off Current (V BE = 0) Base-Emitter Leakage Current Collector-Emitter Sustaining Voltage (IB = 0) Collector-Emitt...
