BUL903 Datasheet | STMicroelectronics

DESCRIPTION The BUL903ED is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The device has been designed in order to operate without baker clamp and transil protection. This enables saving from 2 up to 10 ponents in the application. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp <5 ms) Base Current Base Peak Current (tp <5 ms) Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value 900 400 7 5 8 2 4 70 -65 to 150 150 Uni t V V V A A A A W o o June 1998 1/6 BUL903ED THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.8 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symb ol I CES I EBO V CEO(sus) Parameter Collector Cut-off Current (V BE = 0) Base-Emitter Leakage Current Collector-Emitter Sustaining Voltage (IB = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain Parallel Diode Forward Voltage RESISTIVE LO AD Delay Time Rise Time Storage Time Fall T ime RESISTIVE LO AD Delay Time Rise Time Storage Time Fall T ime Diode Reverse Recovery Time Avalanche Energy Test Cond ition s V CE = 900 V V EB = 7 V I C = 10 m A L = 25 m H 400 Min. Typ . Max. 1 100 Un it m A µA V V CE(sat )∗ V BE(s at)∗ IC = 1 A I C = 0.1 A I C = 0.5 A I C = 2.0 A I C = 5 m A I C = 0.5 A IF = 3 A V CC = 125 V I B1 = 0.05 A t p = 300 µ s I B = 0.15 A IB = 0.05 A IB = 0.1 A IB = 0.4 A V CE = 10 V V CE = 3 V 8 20 1.0 1.0 1.1 1.2 V V V V h FE∗ VF 1.2 I C = 0.7 A I B2 = 0.4 A V td tr ts tf td tr ts tf T RR E sb 0.2 1.0 0.8 0.25 0.2 0.5 0.8 0.5 300 6 µs µs µs µs µs µs µs µs ns m J V CC = 125 V I B1 = 0.045 A t p = 300 µ...