BUL903EDFP Datasheet | STMicroelectronics

DESCRIPTION The BUL903EDFP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The device has been designed to operate without baker clamp and transil protection. This enables saving from 2 up to 10 ponents in the application. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot Visol T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max. Operating Junction Temperature Value 900 400 7 5 8 2 4 35 1500 -65 to 150 150 Unit V V V A A A A W V o o September 2003 1/7 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 3.57 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CES I EBO V (BR)CES Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Breakdown Voltage (V BE = 0) Test Conditions V CE = 900 V V EB = 7 V I C = 100 µ A 900 Min. Typ. Max. 100 100 Unit µA µA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = 10 m A L = 25 m H I C = 0.5 A IC = 1 A IC = 2 A I C = 0.5 A IC = 1 A IC = 2 A IC IC IC IC = = = = 10 m A 0.25 A 0.5 A 2.5 A I B = 50 m A I B = 0.15 A I B = 0.4 A I B = 50 m A I B = 0.15 A I B = 0.4 A V CE = V CE = V CE = V CE = 5 5 5 5 V V V V 20 40 28 8 0.5 1 1.5 1 1.1 1.2 70 60 16 0.2 1 0.8 0.25 6 V V V V V V V BE(sat) ∗ h FE ∗ td tr ts tf E ar RESISTIVE LOAD Delay Time Rise Time Storage Time Fall Time Repetitive Avalanche Energy V CC = 125 V I B1 = 50 m A t...