BUV26AF Overview
Description
Collector-Emitter Sustaining Voltage: VCEO(SUS) = 90V(Min)- BUV26F 100V(Min)- BUV26AF - High Switching Speed APPLICATIONS - Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. SYMBOL PARAMETER BUV26F BUV26AF BUV26F VCEO Collector-Emitter Voltage BUV26AF VEBO IC ICM IB B BUV26F/AF VALUE 180 UNIT VCES Collector-Emitter Voltage VBE= 0 V 200 90 V 100 5 14 25 4 6 18 150 -65~150 Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range V A A A A W ℃ ℃ IBM PC TJ Tstg SYMBOL Rth j-c Rth j-a PARAMETER isc Website： Datasheet pdf - INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TC=25℃ unless otherwise specified SYMBOL PARAMETER BUV26F IC= 0.2A ;IB= 0; L= 25mH B BUV26F/AF CONDITIONS MIN 90 TYP.
