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BUV26F - Silicon NPN Power Transistors

General Description

Collector-Emitter Sustaining Voltage: VCEO(SUS) = 90V(Min)- BUV26F 100V(Min)- BUV26AF High Switching Speed APPLICATIONS

Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control.

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 90V(Min)- BUV26F 100V(Min)- BUV26AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUV26F BUV26AF BUV26F VCEO Collector-Emitter Voltage BUV26AF VEBO IC ICM IB B BUV26F/AF VALUE 180 UNIT VCES Collector-Emitter Voltage VBE= 0 V 200 90 V 100 5 14 25 4 6 18 150 -65~150 www.DataSheet.