Datasheet Details
| Part number | BUV82 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.16 KB |
| Description | Silicon NPN Power Transistor |
| Download | BUV82 Download (PDF) |
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Overview: isc Silicon NPN Power Transistors BUV82/83.
| Part number | BUV82 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.16 KB |
| Description | Silicon NPN Power Transistor |
| Download | BUV82 Download (PDF) |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)-BUV82 = 450V(Min)-BUV83 ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regula- tors, motor control systems and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage VBE=0 BUV82 850 V BUV83 1000 BUV82 400 VCEO Collector-Emitter Voltage V BUV83 450 VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUV82/83 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT BUV82 400 VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 V BUV83 450 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A;
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| Part Number | Description |
|---|---|
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