Datasheet Details
| Part number | BUV89 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.20 KB |
| Description | Silicon NPN Power Transistor |
| Download | BUV89 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUV89 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.20 KB |
| Description | Silicon NPN Power Transistor |
| Download | BUV89 Download (PDF) |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in AC motor control systems from three- phase mains.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage VBE=0 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W BUV89 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUV89 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 800 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4.5A;
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