BUW52
BUW52 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Current Capability
- Fast Switching Speed
- Low Saturation Voltage and High Gain
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in general purpose power amplifier applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage (VBE= -1.5V)
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-peak
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power...
