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IRF256 - N-Channel MOSFET Transistor

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Description

Drain Current ID=20A@ TC=25℃ Drain Source Voltage : VDSS= 275V(Min) Static Drain-Source On-Resistance : RDS(on) =0.14Ω(Max) Nanosecond Switching Speed APPLICATIONS Switching power supplies Switching converters,motor driver,relay driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

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Datasheet Details

Part number IRF256
Manufacturer Inchange Semiconductor
File Size 42.40 KB
Description N-Channel MOSFET Transistor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF256 DESCRIPTION ·Drain Current ID=20A@ TC=25℃ ·Drain Source Voltage : VDSS= 275V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.14Ω(Max) ·Nanosecond Switching Speed APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 275 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 20 A Total Dissipation@TC=25℃ 150 W Max.
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