Datasheet Details
| Part number | IRF257 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 42.40 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | IRF257-InchangeSemiconductor.pdf |
|
|
Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Part number | IRF257 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 42.40 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | IRF257-InchangeSemiconductor.pdf |
|
|
|
·Drain Current ID=20A@ TC=25℃ ·Drain Source Voltage : VDSS= 275V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.17Ω(Max) ·Nanosecond Switching Speed APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 275 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 20 A Total Dissipation@TC=25℃ 150 W Max.
Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 0.83 30 ℃/W ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro .fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF257 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS(TH) Gate Threshold Voltage VGS=0;
ID=250µA VDS= VGS;
| Part Number | Description |
|---|---|
| IRF250 | N-Channel MOSFET Transistor |
| IRF251 | N-Channel MOSFET Transistor |
| IRF252 | N-Channel MOSFET Transistor |
| IRF253 | N-Channel MOSFET Transistor |
| IRF254 | N-Channel MOSFET Transistor |
| IRF255 | N-Channel MOSFET Transistor |
| IRF256 | N-Channel MOSFET Transistor |
| IRF220 | N-Channel MOSFET Transistor |
| IRF221 | N-Channel MOSFET Transistor |
| IRF222 | N-Channel MOSFET Transistor |