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IRF450 - N-Channel MOSFET Transistor

General Description

13A,500V RDS(on)=0.4Ω SOA is Power Dissipation Limited Linear Transfer Characteristics Related Literature APPLICATIONS Designed for applications such as switching regulators, switching convertors ,motor drivers ,relay driver ,and drivers for high power bipolar switchin

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF450 DESCRIPTION ·13A,500V ·RDS(on)=0.4Ω ·SOA is Power Dissipation Limited ·Linear Transfer Characteristics ·Related Literature APPLICATIONS ·Designed for applications such as switching regulators, switching convertors ,motor drivers ,relay driver ,and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 500 ±20 V V Drain Current-continuous@ TC=25℃ 13 A Total Dissipation@TC=25℃ 125 W Max.