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ru~1m S[IG0iJSD©-OTO@H~[OL~M©uOSO@O~DN©~
IRF 450 - 451 IRF 452 - 453
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE IRF450 IRF451 IRF452 IRF453
Voss 500 V 450 V 500 V 450 V
Ros(on) 0.4 0 0.4 0 0.50 0.50
10 13 A 13 A 11 A 11 A
• HIGH VOLTAGE - 450V FOR OFF LINE SMPS • HIGH CURRENT -11A FOR UP TO 350W SMPS • ULTRA FAST SWITCHING - FOR OPERATION
AT > 100 KHz
• EASY DRIVE - REDUCES COST AND SIZE • HERMETIC PACKAGE TO-3
TO-3
INDUSTRIAL APPLICATIONS: • SWITCHING POWER SUPPLIES • MOTOR CONTROLS
INTERNAL SCHEMATIC DIAGRAM
N - channel enhancement mode POWER MOS field
effect transistors. Easy drive and very fast switch-
ing times make these POWER MOS transistors
ideal for high speed switching applications.