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IRFP452 - N-Channel MOSFET Transistor

Description

purpose applications.

Features

  • Drain Current.
  • ID= 12A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 500V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max).
  • Fast Switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – IRFP452

Datasheet Details

Part number IRFP452
Manufacturer Inchange Semiconductor
File Size 236.59 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet IRFP452 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
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