IRFP452R
FEATURES
- Drain Current
- ID= 12A@ TC=25℃
- Drain Source Voltage-
: VDSS= 500V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 0.5Ω(Max)
- Fast Switching
DESCRIPTION
- Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse
PD Total Dissipation @TC=25℃
TJ Max. Operating Junction Temperature
Tstg Storage Temperature
VALUE UNIT
500 V
±20
12 A
48 A
150 W
-55~150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
MAX 0.83 80
UNIT ℃/W ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor isc N-Channel MOSFET...
