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IRFP453 - N-Channel MOSFET Transistor

Description

purpose applications.

Features

  • Drain Current.
  • ID= 12A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 450V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max).
  • Fast Switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – IRFP453

Datasheet Details

Part number IRFP453
Manufacturer Inchange Semiconductor
File Size 236.81 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet IRFP453 Datasheet
Additional preview pages of the IRFP453 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IRFP453 FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 450 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pluse 48 A PD Total Dissipation @TC=25℃ 150 W TJ Max.
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