KSD5090 Overview
·High Breakdown Voltage- : IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A ICBO Collector Cutoff Current VCB= 800V.
KSD5090 Details
| Part number | KSD5090 |
|---|---|
| Datasheet | KSD5090-InchangeSemiconductor.pdf |
| File Size | 122.11 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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