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KSD569 - Silicon NPN Power Transistor

General Description

High Collector Current:: IC= 7A Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 5A Complement to Type KSB708 APPLICATIONS

switching applications.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD569 DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 5A ·Complement to Type KSB708 APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 7V 7A ICM Collector Current-Peak 15 A IB Base Current-Continuous Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature 3.5 A 40 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.