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MJD243 - Silicon NPN Power Transistor

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Part number MJD243
Manufacturer Inchange Semiconductor
File Size 242.07 KB
Description Silicon NPN Power Transistor
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Description

DC Current Gain- : hFE = 40(Min) @ IC= 0.2 A Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A Complement to the PNP MJD253 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low power audio amplifier and low-current, high-speed switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V

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