| Part Number | MJD243 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MJD243 (NPN), MJD253 (PNP)
Preferred Device
Complementary Silicon Plastic Power Transistor
DPAK−3 for Surface Mount Applications
Designed for low voltage, low−power, high−gain audio amplifier applica.
4.0 A, 100 V, 12.5 W POWER TRANSISTOR
4 4 Base 1 Collector 2 Emitter 3 DPAK *3 CASE 369D STYLE 1 1 2 3 DPAK *3 CASE 369C STYLE 1 * Collector *Emitter Sustaining Voltage * * VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Current Gain * hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC. |
MJD243 Datasheet and Specifications PDF
The MJD243 is a Complementary Silicon Plastic Power Transistor.
| Part Number | MJD243 Datasheet |
|---|---|
| Description | Silicon NPN Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·DC Current Gain- : hFE = 40(Min) @ IC= 0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A ·Complement to the PNP MJD253 ·Minimum Lot-to-Lot variations for robust device perfo. isc Website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJD243 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter . |
| Part Number | MJD243 Datasheet |
|---|---|
| Description | NPN SILICON POWER TRANSISTOR |
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD243/D Plastic Power Transistor MJD243* *Motorola Preferred Device DPAK For Surface Mount Applications . . . designed for low voltag. .118 3.0 1.5 15 0.063 1.6 0.243 6.172 inches mm TA (SURFACE MOUNT) 1 10 TC 0.5 0 5 0 25 50 75 100 125 150 T, TEMPERATURE (°C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 © Motorola, Inc. 1995 Motorola Bipolar Po. |