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MJD243 - NPN SILICON POWER TRANSISTOR

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD243/D Plastic Power Transistor MJD243* *Motorola Preferred Device DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC = 1.0 Adc • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.6 Vdc (Max) @ IC = 1.