| Part | MJE200 |
|---|---|
| Description | Silicon NPN Power Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 213.52 KB |
Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 25V(Min) - DC Current Gain- : hFE = 70(Min) @ IC= 500mA - Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)@ IC = 500mA - High Current-Gain-Bandwidth Product fT= 65MHz(Min) @ IC= 100mA - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| MJE200 | onsemi | Complementary Silicon Power Plastic Transistors |
| MJE200 | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor |
| MJE200G | onsemi | Complementary Silicon Power Plastic Transistors |
| MJE200 | Central Semiconductor | COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJE200 | Motorola Semiconductor | 5 AMPERE POWER TRANSISTORS |
