MJE200 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE200/D plementary Silicon Power Plastic Transistors . . . designed for low voltage, low- power, high- gain audio amplifier applications. - Collector- Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc - High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc High DC Current Gain - hFE = 45 (Min) @ IC = 2.0 Adc High DC Current Gain - hFE = 10 (Min) @ IC = 5.0 Adc - Low Collector- Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc - High Current- Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc - Annular Construction for Low Leakage - ICBO =...