| Part Number | MJE200 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 25V(Min) ·DC Current Gain- : hFE = 70(Min) @ IC= 500mA ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)@ IC = 500mA ·High Current-G. nction to Ambient 8.34 ℃/W 83.4 ℃/W MJE200 isc Website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MJE200 MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaini. |
MJE200 Datasheet and Specifications PDF
The MJE200 is a Silicon NPN Power Transistor.
| Part Number | MJE200 Datasheet |
|---|---|
| Description | Complementary Silicon Power Plastic Transistors |
| Manufacturer | onsemi |
| Overview |
MJE200 - NPN, MJE210 - PNP
Preferred Device
Complementary Silicon Power Plastic Transistors
These devices are Ădesigned for low voltage, low-power, high-gain
audio amplifier applications.
Features
•ă.
*ăCollector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc *ăHigh DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2.0 Adc = 10 (Min) @ IC = 5.0 Adc *ăLow Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2. |
| Part Number | MJE200 Datasheet |
|---|---|
| Description | NPN Epitaxial Silicon Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview |
MJE200
MJE200
Feature
• Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) • Complement to MJE210
1
TO-126 2.Collector 3.Base
1. Emitter
N.
* Low Collector-Emitter Saturation Voltage * High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) * Complement to MJE210 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG. |
| Part Number | MJE200 Datasheet |
|---|---|
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TA=25°C) . . |