MJE200 Description
·Collector Emitter Sustaining Voltage- : VCEO(SUS) = 25V(Min) ·DC Current Gain- : hFE = 70(Min) @ IC= 500mA ·Low Collector-Emitter Saturation Voltage-.
MJE200 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
MJE200 | 5 AMPERE POWER TRANSISTORS |
Fairchild |
MJE200 | NPN Epitaxial Silicon Transistor |
| MJE200 | COMPLEMENTARY SILICON POWER TRANSISTORS | |
| MJE200 | Complementary Silicon Power Plastic Transistors | |
| MJE200G | Complementary Silicon Power Plastic Transistors |
·Collector Emitter Sustaining Voltage- : VCEO(SUS) = 25V(Min) ·DC Current Gain- : hFE = 70(Min) @ IC= 500mA ·Low Collector-Emitter Saturation Voltage-.