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MJH16010 - Silicon NPN Power Transistor

General Description

Collector-Emitter Voltage- : VCEO(SUS)= 450V(Min) Low VCE(sat)@IC=10A Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High voltage inverters Off -

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Voltage- : VCEO(SUS)= 450V(Min) ·Low VCE(sat)@IC=10A ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High voltage inverters ·Off - line power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCEV Collector-Emitter Voltage 850 VCEO(SUS) Collector-Emitter Voltage 450 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous 15 ICM Collector Current-Peak 20 IB Base Current-Continuous 10 IBM Base Current-Peak 15 UNIT V V V A A A A PC Collector Power Dissipation @TC=25℃ 175 W Tj Junction Temperature Tstg Storage Temperature Range -55~150 -55~150 ℃