Part MJH11017
Description Silicon PNP Darlington Power Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 222.87 KB
Inchange Semiconductor

MJH11017 Overview

Description

High DC Current Gain- : hFE = 400(Min)@ IC= -10A - Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -150V(Min) - Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.5V(Max)@ IC= -10A = -4.0V(Max)@ IC= -15A - Complement to Type MJH11018 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.