Datasheet4U Logo Datasheet4U.com

MJH11017 Datasheet Complementary Darlington Silicon Power Transistors

Manufacturer: ON

Datasheet Details

Part number MJH11017
Manufacturer ON
File Size 86.06 KB
Description Complementary Darlington Silicon Power Transistors
Datasheet MJH11017_ONSemiconductor.pdf

MJH11017 Overview

These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) Collector−Emitter Sustaining Voltage Collector Current − Continuous − Peak (Note 1) VEB 5.0 Vdc IC 15 Adc 30 Base Current Total Device Dissipation @ TC = 25_C Derate above 25_C IB 0.5 Adc PD 150 W 1.2 W/_C Operating and Storage Junction Temperature TJ, Tstg 65 to Range + 150 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit

MJH11017 Key Features

  • High DC Current Gain @ 10 Adc - hFE = 400 Min (All Types) - Collector-Emitter Sustaining Voltage
  • Low Collector-Emitter Saturation Voltage
  • Monolithic Construction - These are Pb-Free Devices

MJH11017 Applications

  • High DC Current Gain @ 10 Adc - hFE = 400 Min (All Types) - Collector-Emitter Sustaining Voltage
  • Low Collector-Emitter Saturation Voltage
  • Monolithic Construction - These are Pb-Free Devices

MJH11017 Distributor