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MJH11019 Datasheet Complementary Darlington Silicon Power Transistors

Manufacturer: ON

Datasheet Details

Part number MJH11019
Manufacturer ON
File Size 86.06 KB
Description Complementary Darlington Silicon Power Transistors
Datasheet MJH11019_ONSemiconductor.pdf

MJH11019 Overview

These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage • Low Collector−Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A Collector Current − Continuous − Peak (Note 1) VEB 5.0 Vdc

MJH11019 Key Features

  • High DC Current Gain @ 10 Adc
  • hFE = 400 Min (All Types)
  • Collector-Emitter Sustaining Voltage
  • MJH11018, 17 = 200 Vdc (Min)
  • MJH11020, 19 = 250 Vdc (Min)
  • MJH11022, 21
  • Low Collector-Emitter Saturation Voltage
  • Monolithic Construction
  • These are Pb-Free Devices
  • Continuous

MJH11019 Distributor