Part MJH11019
Description Complementary Darlington Silicon Power Transistors
Category Transistor
Manufacturer onsemi
Size 86.06 KB
onsemi

MJH11019 Overview

Key Features

  • High DC Current Gain @ 10 Adc
  • hFE = 400 Min (All Types)
  • Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min)
  • MJH11018, 17 = 200 Vdc (Min)
  • MJH11020, 19 = 250 Vdc (Min)
  • MJH11022, 21
  • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A
  • These are Pb-Free Devices