MJH11012 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 20A Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A Complement to the PNP MJ11011 Minimum Lot-to-Lot variations for robust device performance and reliable

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Datasheet Details

Part number	MJH11012
Manufacturer	Inchange Semiconductor
File Size	213.68 KB
Description	NPN Transistor
Datasheet	MJH11012 Datasheet

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isc Silicon NPN Darlington Power Transistor MJH11012 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A ·Complement to the PNP MJ11011 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.