MJH11012 Description
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage-.
MJH11012 is NPN Transistor manufactured by Inchange Semiconductor.
| Part Number | Description |
|---|---|
| MJH13090 | NPN Transistor |
| MJH13091 | NPN Transistor |
| MJH16006 | NPN Transistor |
| MJH16008 | NPN Transistor |
| MJH16018 | NPN Transistor |
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage-.