| Part | MJH11012 |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 213.68 KB |
Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) - High DC Current Gain- : hFE= 1000(Min.)@IC= 20A - Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A - Complement to the PNP MJ11011 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| MJH11019 | onsemi | Complementary Darlington Silicon Power Transistors |
| MJH11017 | onsemi | Complementary Darlington Silicon Power Transistors |
| MJH11018 | Motorola Semiconductor | 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJH11017 | Motorola Semiconductor | 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJH11018 | onsemi | Complementary Darlington Silicon Power Transistors |
