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MMBR941L - Silicon NPN RF Transistor

General Description

Low Noise High Current-Gain Bandwidth Product Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

amplifiers.

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isc Silicon NPN RF Transistor INCHANGE Semiconductor MMBR941L DESCRIPTION ·Low Noise ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high gain , low noise small-signal amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature 50 mA 0.25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.