MMBR941L datasheet by Inchange Semiconductor.
| Part number | MMBR941L |
|---|---|
| Datasheet | MMBR941L-InchangeSemiconductor.pdf |
| File Size | 208.66 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
|
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·Low Noise ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high gain , low noise small-signal amplifiers. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA ; IB= 0 10 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA.
View MMBR941LT1 datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MMBR941LT1 | NPN Silicon Low Noise / High-Frequency Transistors | Motorola |
|
MMBR941LT3 | NPN Silicon Low Noise / High-Frequency Transistors | Motorola |
|
MMBR941 | NPN Silicon Low Noise / High-Frequency Transistors | Motorola |
|
MMBR941BLT1 | NPN Silicon Low Noise / High-Frequency Transistors | Motorola |
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