Datasheet Details
| Part number | MMBR941L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.66 KB |
| Description | Silicon NPN RF Transistor |
| Datasheet | MMBR941L-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN RF Transistor INCHANGE Semiconductor MMBR941L.
| Part number | MMBR941L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.66 KB |
| Description | Silicon NPN RF Transistor |
| Datasheet | MMBR941L-InchangeSemiconductor.pdf |
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·Low Noise ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high gain , low noise small-signal amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature 50 mA 0.25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor MMBR941L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MMBR941LT1 | NPN Silicon Low Noise / High-Frequency Transistors | Motorola |
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MMBR941LT3 | NPN Silicon Low Noise / High-Frequency Transistors | Motorola |
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MMBR941 | NPN Silicon Low Noise / High-Frequency Transistors | Motorola |
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MMBR941BLT1 | NPN Silicon Low Noise / High-Frequency Transistors | Motorola |
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