Download MMBR941 Datasheet PDF
MMBR941 page 2
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MMBR941 Description

26MAR02 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small signal amplifiers.

MMBR941 Key Features

  • Fully Implanted Base and Emitter Structure
  • 9 Finger, 1.25 Micron Geometry with Gold Top Metal
  • Gold Sintered Back Metal
  • Available in tape and reel packaging options
  • Continuous (2)
  • 55 to +150 300
  • 55 to +150 400
  • Vdc All
  • Vdc All
  • 0.1 µAdc All