MMBR941BLT1 Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small signal amplifiers.
MMBR941BLT1 Key Features
- Fully Implanted Base and Emitter Structure
- 9 Finger, 1.25 Micron Geometry with Gold Top Metal
- Gold Sintered Back Metal
- Available in tape and reel packaging options: T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel
- 55 to +150 400 Unit Vdc Vdc Vdc Watts mW/°C mA °C °C °C/W
- 0.1 µAdc
- 0.1 µAdc 20 23
- Vdc 10 12
- 200 200
- 150 200