Inchange Semiconductor 60NF06
N-Channel MOSFET Transistor
FEATURES
●Drain Current –ID=60A@ TC=25℃●Drain Source Voltage: VDSS= 60V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.016Ω(Max)
●Fast Switching
DESCRIPTION
Suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements .APPLICATIONS
●High-efficiency DC-DC converters●UPS and motor control
●Automotive
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL VDSS VGS ID IDM PD TJ Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse (tp≤10μs) Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature VALUE 60 ±20 60 240 110 175 -65~175 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.36 62.5 UNIT ℃/W ℃/W isc Website: INCHANGE Semiconductor isc Product Specification i...