Datasheet4U Logo Datasheet4U.com

60NF06 - N-Channel MOSFET Transistor

General Description

Suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application.

It is also intended for any application with low gate charge drive requirements .

High-efficiency DC-DC converters UPS and motor control Automotive ABSOL

Key Features

  • Drain Current.
  • ID=60A@ TC=25℃.
  • Drain Source Voltage: VDSS= 60V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.016Ω(Max).
  • Fast Switching.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
60NF10 N-CHANNEL Power MOSFET STMicroelectronics
60N03 Power MOSFET Tuofeng Semiconductor
60N03 N-Channel MOSFET Anachip
60N03 N-Channel MOSFET Cmos
60N035 N-Channel Field Effect Transistor ETC

Other Datasheets by Inchange Semiconductor

Part Number Description
60N05-16 N-Channel MOSFET
60N06 TO-220F N-Channel MOSFET Transistor
60N06-14 N-Channel MOSFET
60N06-18 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor www.DataSheet4U.com isc Product Specification isc N-Channel MOSFET Transistor 60NF06 FEATURES ·Drain Current –ID=60A@ TC=25℃ ·Drain Source Voltage: VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.016Ω(Max) ·Fast Switching DESCRIPTION Suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements . APPLICATIONS ·High-efficiency DC-DC converters ·UPS and motor control ·Automotive ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VDSS VGS ID IDM PD TJ Tstg PARAMETER Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse (tp≤10μs) Total Dissipation @TC=25℃ Max.