2SA1615-Z Description
·Large current capacity:IC(DC)= -10A IC(pulse)=-15A ·High hFE and low saturation voltage: 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= -4A; IB= -50mA VBE(sat)NOTE Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= -4A;.