3DD15B Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.
3DD15B is Silicon NPN Power Transistor manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
Huajing Microelectronics |
3DD1545 | NPN Transistor |
JILIN SINO |
3DD1555 | CASE-RATED BIPOLAR TRANSISTOR |
JILIN SINO |
3DD1555A | CASE-RATED BIPOLAR TRANSISTOR |
JILIN SINO |
3DD1555P | CASE-RATED BIPOLAR TRANSISTOR |
| ETC Unknown Manufacturer |
3DD157 | Low-frequency silicon NPN power transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-.