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IRF626 page 2
Page 2

IRF626 Description

INCHANGE Semiconductor isc N-Channel Mosfet Transistor.

IRF626 Key Features

  • RDS(on) =1.1Ω -3.8A and 275V -single pulse avalanche energy rated -SOA is Power- Dissipation Limited -Linear Transfer Ch
  • DESCRITION -Designed for high speed