Click to expand full text
BAW78.../BAW79...
Silicon Switching Diodes
Switching applications High breakdown voltage
BAW78D
2
BAW79D
2
1
2
3
1
2
3
Type BAW78D BAW79D
Parameter
Package SOT89 SOT89
Configuration single common cathode
Symbol VR VRM IF IFM IFS Ptot Value
Marking GD GH
Unit
Maximum Ratings at TA = 25°C, unless otherwise specified
Diode reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation BAW78D, TS ≤ 125°C BAW79D, TS ≤ 115°C Junction temperature Storage temperature
Thermal Resistance Parameter
400 400 1 1 10
V A
W 1 1
Tj Tstg Symbol RthJS
150 -65 ... 150
Value ≤ 25 ≤ 35
°C
Unit
Junction - soldering point1) BAW78D BAW79D
1
K/W
Feb-03-2003
BAW78.../BAW79...