BCV61B
BCV61B is NPN Silicon Double Transistor manufactured by Infineon.
NPN Silicon Double Transistor
- To be used as a current mirror
- Good thermal coupling and VBE matching
- High current gain
- Low collector-emitter saturation voltage
- Pb-free (RoHS pliant) package
- Qualified according AEC Q101
BCV61
3 4
2 1
C1 (2)
C2 (1)
Tr.1 Tr.2
Type BCV61B BCV61C
Marking 1Ks 1Ls
E1 (3)
E2 (4)
EHA00012
1 = C2 1 = C2
Pin Configuration 2 = C1 3 = E1 4 = E2 2 = C1 3 = E1 4 = E2
Package SOT143 SOT143
Maximum Ratings Parameter Collector-emitter voltage (transistor T1)
Symbol VCEO
Value 30
Collector-base voltage (open emitter) (transistor T1)
VCBO
Emitter-base voltage DC collector current Peak collector current, tp < 10 ms Base peak current...
