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BF1005...
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network
Drain AGC HF Input G2 G1 HF Output + DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF1005 BF1005R BF1005W* * on request only
Maximum Ratings Parameter
Package SOT143 SOT143R SOT343 1=S 1=D 1=D 2=D 2=S 2=S
Pin Configuration 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 -
Marking MZs MZs MZ
Symbol VDS ID ±IG1/2SM +VG1SE Ptot
Value 8 25 10 3 200 200
Unit V mA V mW
Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C, BF1005, BF1005R TS ≤ 94 °C, BF1005W Storage temperature Channel temperature
Tstg Tch
-55 ...
BF1005W Datasheet
