BF1005 Datasheet | Siemens Semiconductor Group

BF 1005 Silicon N-Channel MOSFET Tetrode - For low noise, high gain controlled input stages up to 1GHz - Operating voltage 5V - Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 1005 Marking Ordering Code Pin Configuration MZs Q62702-F1498 1 = S 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S ≤ 76 °C Storage temperature Channel temperature Symbol Value 8 25 10 3 200 - 55 ...+150 150 V m W °C Unit V m A VDS ID ±I G1/2SM +VG1SE Ptot T stg T ch Thermal Resistance Channel - soldering point Rthchs ≤370 K/W Note: It is not remended to apply external DC-voltage on Gate 1 in active mode. Semiconductor Group Semiconductor Group Au 1998-11-01 -25-1998 BF 1005 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage typ. 100 10 1 max. 12 13 50 1.5 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 12 8 8 8 -...