BF1009 Datasheet | Siemens Semiconductor Group

BF 1009 Silicon N-Channel MOSFET Tetrode - For low noise, high gain controlled input stages up to 1GHz - Operating voltage 9 V - Integrated stabilized bias network 3 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 1009 Marking Ordering Code Pin Configuration JKs Q62702-F1613 1 = S 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation , T S ≤ 76 °C0 Storage temperature Channel temperature Symbol Value 12 25 10 3 200 -55 ...+150 150 V mW °C Unit V mA VDS ID ±IG1/2SM +VG1SE Ptot Tstg Tch Thermal...