Datasheet Summary
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
3 4 input stages up to 1GHz
Operating voltage 9V Integrated bias network
Drain AGC HF Input G2 G1 HF Output + DC
2 1
VPS05605
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF1009SW
Maximum Ratings Parameter Drain-source voltage
Marking JLs 1=D
Pin Configuration 2=S 3 = G1 4 = G2
Package SOT343
Unit V mA V mW °C
Symbol VDS ID ±IG1/2SM +VG1SE Ptot Tstg Tch
Value 12 25 10 3 200 -55 ... 150 150
Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, TS 76 °C Storage temperature Channel...
