BF1005SW - Silicon N-Channel MOSFET Tetrode

Infineon Technologies AG

Datasheet Details

Part number	BF1005SW
Manufacturer	Infineon Technologies AG
File Size	252.41 KB
Description	Silicon N-Channel MOSFET Tetrode
Datasheet	BF1005SW Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BF1005S	Silicon N-Channel MOSFET Tetrode	Siemens Semiconductor Group
BF1005	Silicon N-Channel MOSFET Tetrode	Siemens Semiconductor Group
BF1005	ON/OFF Dimming LED Driver IC	BYD
BF1009	Silicon N-Channel MOSFET Tetrode	Siemens Semiconductor Group
BF1009S	Silicon N-Channel MOSFET Tetrode	Siemens Semiconductor Group

Other Datasheets by Infineon Technologies AG

Part Number	Description
BF1005S	Silicon N-Channel MOSFET Tetrode
BF1005SR	Silicon N-Channel MOSFET Tetrode
BF1005	Silicon N-Channel MOSFET Tetrode
BF1005R	Silicon N-Channel MOSFET Tetrode
BF1005W	Silicon N-Channel MOSFET Tetrode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

BF1005S... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF1005S BF1005SR BF1005SW Maximum Ratings Parameter Package SOT143 SOT143R SOT343 1=S 1=D 1=D 2=D 2=S 2=S Pin Configuration 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 - Marking NZs NZs NZ Symbol VDS ID ±IG1/2SM +VG1SE Ptot Value 8 25 10 3 200 200 Unit V mA V mW Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C, BF1005S, BF1005SR TS ≤ 94 °C, BF1005SW Storage temperature Channel temperature Tstg Tch -55 ...