BF1005SR - Silicon N-Channel MOSFET Tetrode

Infineon Technologies AG

Datasheet Details

Part number	BF1005SR
Manufacturer	Infineon Technologies AG
File Size	80.76 KB
Description	Silicon N-Channel MOSFET Tetrode
Datasheet	BF1005SR Datasheet

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Other Datasheets by Infineon Technologies AG

Part Number	Description
BF1005S	Silicon N-Channel MOSFET Tetrode
BF1005SW	Silicon N-Channel MOSFET Tetrode
BF1005	Silicon N-Channel MOSFET Tetrode
BF1005R	Silicon N-Channel MOSFET Tetrode
BF1005W	Silicon N-Channel MOSFET Tetrode

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Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF1005S... AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration BF1005S SOT143 1=S 2=D 3=G2 4=G1 - - BF1005SR SOT143R 1=D 2=S 3=G1 4=G2 - - Marking NZs NZs Maximum Ratings Parameter Symbol Value Unit Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C Storage temperature Channel temperature VDS ID ±IG1/2SM +VG1SE Ptot Tstg Tch 8 25 10 3 200 -55 ...