BF1005S Description
Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1 GHz Operating voltage 5 V Integrated biasing network Pb-free (RoHS pliant) package1) Qualified according AEC Q101 BF1005S... AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrostatic discharge) sensitive device, observe handling precaution! 150 150 V mA V mW °C 1Pb-containing package may be available upon special request...