BF1005S Datasheet | Infineon

Silicon N-Channel MOSFET Tetrode - For low noise, high gain controlled input stages up to 1 GHz - Operating voltage 5 V - Integrated biasing network - Pb-free (Ro HS pliant) package1) - Qualified according AEC Q101 BF1005S... RF Input Drain RF Output G2 + DC G1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration SOT143 1=S 2=D 3=G2 4=G1 - - BF1005SR SOT143R 1=D 2=S 3=G1 4=G2 - - Marking NZs NZs Maximum Ratings Parameter Symbol Value Unit Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C Storage temperature Channel temperature VDS ID ±IG1/2SM +VG1SE Ptot Tstg Tch 8 25 10 3 200 -55 ... 150 150 V m...