BF1009S Datasheet | Siemens Semiconductor Group

BF 1009S Silicon N-Channel MOSFET Tetrode - For low noise, high gain controlled input stages up to 1GHz - Operating voltage 9V - Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-F1628 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 BF 1009S JLs Maximum Ratings Parameter Drain-source voltage Symbol Value 12 25 10 3 200 -55 ...+150 150 Unit V mA V mW °C VDS ID ±I G1/2SM +VG1SE Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S ≤ 76 °C Storage temperature Channel temperature Ptot T stg T ch Thermal Resistance Channel -...