BF1005S Datasheet | Siemens Semiconductor Group

BF 1005S Silicon N-Channel MOSFET Tetrode - For low noise, high gain controlled input stages up to 1GHz - Operating voltage 5V - Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-F1665 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 BF 1005S NZs Maximum Ratings Parameter Drain-source voltage Symbol Value 8 25 10 3 200 - 55 ...+150 150 Unit V m A V m W °C VDS ID ±I G1/2SM +VG1SE Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S ≤ 76 °C Storage temperature Channel temperature Ptot T stg T ch Thermal Resistance Channel - soldering point Rthchs ≤370 K/W Note: It is not remended to apply external DC-voltage on Gate 1 in active mode. Semiconductor Group Semiconductor Group Au 1998-11-01 -25-1998 BF 1005S Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage typ. 100 13 1 max. 12 13 50...