| Part Number | BF1005S Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified ac. nnel - soldering point1) Symbol Rthchs Value ≤ 370 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 650 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG. |
BF1005S Datasheet and Specifications PDF
The BF1005S is a Silicon N-Channel MOSFET Tetrode.
| Part Number | BF1005S Datasheet |
|---|---|
| Description | Silicon N-Channel MOSFET Tetrode |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BF 1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensit. characteristics Drain-source breakdown voltage typ. 100 13 1 max. 12 13 50 800 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 12 8 8 - V I D = 650 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S = V DS = 0 Gate 2 source breakdown voltage ±I G2S = 10. |